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This set of MCQs helps students to learn about ultra-fast VLSI circuits and systems – GaAS technology and will briefly review some of the limitations of silicon devices and then look at the emerging alternative for ultra-fast systems — gallium arsenide.
At ______ length, the holes start to run into velocity saturation.
________ is used with silicon to satisfy the need for very high speed integrated technology.
Current drive is ______ to mobility.
The gallium arsenide field effect transistor is ________ majority carrier device.
Submicron CMOS technology is,
Faster
Slower
Large
Slow and large
In CMOS devices, which has slower performance?
n-transistor
p-transistor
All of the mentioned
None of the mentioned
As the channel length is scaled down, influence of mobility
Increases
Decreases
Remains the same
Does not affect
Current is dependent on ________ when saturation velocity occurs.
Mobility
Channel length
Saturation velocity
Transconductance
When velocity saturation occurs, Idsat is ______ to Vsat.
inversely proportional
directly proportional
logarithmically proportional
not related
Velocity saturation occurs at,
Lower electric field strength in n-devices
Higher electric field strength
Intermittent electric field strength
Lower electric field strength in p-devices
When dimensions are scaled down ______ tends to a constant value.
Current drive from p-transistors
Current drive from n-transistors
Voltage drive from p-transistors
Voltage drive from n-transistors
______ technology is used to provide for faster devices.
Silicon based FET technology
Silicon based MOS technology
Gallium arsenide based MOS technology
Gallium arsenide based VLSI technology
Silicon logic is faster than gallium arsenide.
True
False
How many masking stages does fabrication of GaAs FET require?
Five
Four
Ten
Eight
Which is ON device?
e type MESFET
d type MESFET
Depletion
Enhancement
