Introduction to MOS

This set of MCQs helps students to learn about introduction to MOS which describes the principals of forming MOS structure are similar to the metal-semiconductor (MS) contact structures, but the MOS structure is like a sandwich structure which have a thin layer of silicon oxides in the middle between metal and semiconductor (Si) layer.

Start Quiz

What is the condition for non saturated region?

Vds = Vgs – Vt Vgs lesser than Vt Vds lesser than Vgs – Vt Vds greater than Vgs – Vt

What is the condition for non conducting mode?

Vds lesser than Vgs Vgs lesser than Vds Vgs = Vds = 0 Vgs = Vds = Vs = 0

What is the condition for linear region?

Vgs lesser than Vt Vgs greater than Vt Vds lesser than Vgs Vds greater than Vgs

Source and drain in nMOS device are isolated by ____________.

A single diode

Two diodes

Three diodes

Four diodes

nMOS devices are formed in ____________.

p-type substrate of high doping level

n-type substrate of low doping level

p-type substrate of moderate doping level

n-type substrate of high doping level

Electronics are characterized by ____________.

Low cost

Low weight and volume

Reliability

All of the mentioned

Speed power product is measured as the product of ____________.

Gate switching delay and gate power dissipation

Gate switching delay and gate power absorption

Gate switching delay and net gate power

Gate power dissipation and absorption

In depletion mode, source and drain are connected by ____________.

Insulating channel

Conducting channel

Vdd

Vss

In enhancement mode, device is in _________ condition.

Conducting

Non conducting

Partially conducting

Insulating

nMOS is ____________.

Donor doped

Acceptor doped

All of the mentioned

None of the mentioned

MOS transistor structure is ____________.

Symmetrical

Non symmetrical

Semi symmetrical

Pseudo symmetrical

pMOS is ____________.

Donor doped

Acceptor doped

All of the mentioned

None of the mentioned

pMOS is ____________.

Donor doped

Acceptor doped

All of the mentioned

None of the mentioned

Inversion layer in enhancement mode consists of excess of ____________.

Positive carriers

Negative carriers

Both in equal quantity

Neutral carriers

As source drain voltage increases, channel depth ____________.

Increases

Decreases

Logarithmically increases

Exponentially increases

Quiz/Test Summary

Title: Introduction to MOS

Questions: 15

Contributed by:

Steve Wed, Apr 06, 2022 08:20 AM UTC

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