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This set of MCQs helps students to learn about basic electrical properties of MOS and BiCMOS Circuits, Ids-Vds relationships, MOS transistor threshold Voltage, gm, gds, figure of merit ωo ; Pass transistor, NMOS Inverter, Various pull ups, CMOS Inverter analysis and design, BiCMOS Inverters.
What is the mobility of proton or hole at room temperature?
What is the condition for saturation?
When the channel pinches off?
Ids depends on ___________.
Vg
Vds
Vdd
Vss
Transit time can be given by __________.
L / v
v / L
v x L
v x d
Velocity can be given as __________.
µ / Vds
µ / Eds
µ x Eds
Eds / µ
Ids can be given by __________.
Qc x Ʈ
Qc / Ʈ
Ʈ / Qc
Qc / 2Ʈ
Eds is given by __________.
Vds / L
L / Vds
Vds x L
Vdd / L
In resistive region __________.
Vds greater than (Vgs – Vt)
Vds lesser than (Vgs – Vt)
Vgs greater than (Vds – Vt)
Vgs lesser than (Vds – Vt)
Threshold voltage is negative for __________.
nMOS depletion
nMOS enhancement
pMOS depletion
pMOS enhancement
The current Ids _______ as Vds increases.
Increases
Decreases
Remains fairly constant
Exponentially increases
In linear region ______ channel exists.
Uniform
Non-uniform
Wide
Uniform and wide
When the threshold voltage is more, leakage current will be?
More
Less
All of the mentioned
None of the mentioned
MOSFET is used as ___________.
Current source
Voltage source
Buffer
Divider
Increasing Vsb _______ the threshold voltage.
Does not effect
Decreases
Increases
Exponentially increases
